Preprint
Oct 2026
Strain-induced disorder from Schottky gates on high mobility 2DEGs
Electrostatic gates on two-dimensional electron gases (2DEGs) in GaAs/AlGaAs heterostructures are essential for numerous studies of correlation driven phenomena, many performed within the fractional quantum Hall effect. However, the most commonly used type of gates, the metallic Schottky gate, has the propensity to adv...
Sambit Mohapatra, Lukas Berg, Jean-Baptiste Cuvellier et al.
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