A high-performance Si0.5Ge0.5 source vertical nanowire TFET for ultra-sensitive biosensing and high-speed comparator applications
In this work, a SixGe1−x source-engineered vertical nanowire tunnel field effect transistor (VNW-TFET) is proposed and systematically investigated for biosensing and circuit applications. The effect of Ge mole fraction (x = 0–0.9) is analyzed, and it is observed that the Si0.5Ge0.5 configuration exhibits optimal perfor...