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Origin and Reduction of Coercive Fields in ZnO-based Wurtzite Ferroelectrics
Wurtzite ferroelectrics offer a route to semiconductor-compatible non-volatile devices, but their large coercive fields (E$_c$) constrain the operating window between polarization reversal, leakage and dielectric breakdown. Atomically localized and non-classical switching fronts have recently been identified in wurtzit...