Cu-Doped Ga2O3 Thin Films Enabling High-Performance p-Type Solar-Blind Photodetectors
Low hole mobility, strong hole trapping, and self-compensation effects limit the achievement of stable p-type conductivity in the β-Ga2O3 semiconductor, thereby inhibiting its application in advanced electronic devices. From a theoretical standpoint, the relatively flat nature of the valence band maximum (VBM) with d...