Bong-Gi Lim

Interface-Engineered Hafnia–MoS2 Ferroelectric Field-Effect Transistors Enabling a Nearly Ideal Memory Window with Back-End-of-Line Compatibility

Two-dimensional (2D) semiconductors, with their atomically thin geometry and excellent electrostatic control, are promising channel materials for ferroelectric field-effect transistors (FeFETs). However, integrating high-quality ferroelectric gate stacks onto these ultrathin channels in a manner compatible with modern...