Author

Chen-Ming Hu

2 papers indexed here

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Open access Oct 2026

Dielectric Engineering for Sub-Nanometer Equivalent Oxide Thickness in Double-Gate WS2-FETs Using All-ALD-HfO2/ h -AlN Gate Stacks

This study reports a gate stack composed of an ultrathin epitaxial hexagonal aluminum nitride (h-AlN) interfacial layer (IL) deposited by plasma-enhanced atomic layer deposition (PEALD) between hafnium oxide (HfO2) and a monolayer tungsten disulfide (WS2) channel. The inherently inert surfaces of two-dimensional (2D)...

Shin-Yuan Wang, Shu-Jui Chang, Yu-Che Huang et al. · ACS Applied Electronic Mater... · 0 citations

Open access Sep 2026

Functionalization-Free Atomic Layer Deposition of Sub-1 nm EOT HfO2 Directly on MoS2 for Gate-All-Around Field-Effect Transistors

Layered semiconductors offer a promising route beyond conventional silicon technology but face challenges in integrating high-k dielectrics due to their dangling-bond-free surfaces. Here, we report a direct atomic layer deposition approach, termed HALO (High-dose precursor immersion, Adsorption enhancement, and Low-t...

Po-Heng Pao, Yi-Hsien Lin, Jia-Hao Chih et al. · ACS Applied Electronic Mater... · 0 citations