Open access
Sep 2026
Controlling Electrochemical Metallization in Low-Temperature Microwave-Grown MoS2 RRAM through Ultrathin MoO3 Interfacial Engineering
Resistive random-access memory (RRAM) has attracted significant attention as a next-generation nonvolatile memory technology owing to its simple structure, fast switching speed, and compatibility with back-end-of-line (BEOL) integration. Among emerging switching media, two-dimensional molybdenum disulfide (MoS2) offe...
Jin-Bin Yang, Yu-Ting Huang, Zih-Syuan Huang et al.
· ACS Applied Electronic Mater... · 0 citations