Open access
Oct 2026
Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer
The atomically smooth surfaces of two-dimensional (2D) nanomaterials minimise scattering-induced carrier-transport degradation. However, this same attribute poses a major challenge for integrating 2D materials with high-quality dielectrics at sub-nanometre equivalent oxide thickness (EOT) through direct growth. Here we...
Sun-Leng Wong, Fu-Fei An, Yu Wu et al.
· Nature Communications · 0 citations