Preprint
Nov 2026
FNO-Based Inverse Co-Design of Semiconducting Quantum-Dot Devices
Gate-defined semiconductor quantum dots are promising building blocks for scalable spin-based quantum processors, however their operational properties depend on several fabrication and control parameters, such as lithographic gate layout and applied voltages. Existing device architectures have been refined through repe...
Marek Rychetský, Valentin Duruisseaux, Freya Shah et al.
· 0 citations