Mechanisms of Temperature‐Dependent Hysteresis in Freestanding BaTiO3/MoS2 Heterostructures
ABSTRACT Freestanding ferroelectric oxides integrated with 2D semiconductors offer a platform for reconfigurable electronic functionalities beyond conventional dielectric gating. However, once released from epitaxial constraint and transferred directly onto metallic gates, the BaTiO3 (BTO) membranes under study prefere...