Modeling of Diamond Trench Metal Oxide Semiconductor Barrier Schottky Rectifier Based on Dynamic Reverse Bias Simulation Framework
This work presents an electrothermal optimization study of diamond‐based trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) rectifiers using mixed‐mode drift‐diffusion technology computer aided design simulations under quasi‐static and dynamic reverse‐bias conditions. The influence of drift‐layer thickness,...
Martin Kah, Nazareno Donato, Ethan Gardner et al.
· physica status solidi (a) · 0 citations