Govinda M. R.

Single-Ended 7T SRAM Cell Design Using 18 nm FinFET Technology for Low-Power and High-Stability Nanoscale VLSI Applications

This study presents the design and performance evaluation of a single-ended seven-transistor (7T) static random-access memory (SRAM) cell in 18 nm fin field-effect transistor (FinFET) technology for low-power, high-stability nanoscale very-large-scale integration (VLSI) applications. The cell combines separate read and...