Preprint
Aug 2026
Deep-Learning-Accelerated Dopant Selection for High-k HfO2 Dielectrics: A Disorder-Resolved Study of Y, Si and Al
Hafnium oxide (HfO2) is the cornerstone high-k dielectric in modern silicon technology. Since the constraints of silicon device fabrication rule out replacing the material itself, dopant incorporation is the principal means available to engineer its band gap and dielectric constant within existing process flows. Howeve...
Zunair Masroor, B. Gu, Wonjoong Kim et al.
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