Hao-Jin An

Resonant Levels and Optimized Thermoelectric Performance in Cr‐Filled ZrCoBi 0.8 Sn 0.2

Vacancy‐filling strategy not only expands the Heusler family but also efficiently optimizes their thermoelectric performance. In this work, Cr atoms with 6 valence electrons are filled into the vacant 4d site of ZrCoBi 0.8 Sn 0.2 , preserving its semiconducting behavior. A small amount of Cr filling does not al...