S-ALSA: Co-Design of Adiabatic Logic-based Sensing and Balanced Bit-Cells for Secure and Energy-Efficient MRAM
Magnetoresistive Random Access Memory (MRAM) technologies such as Spin-Transfer Torque (STT-MRAM) and Spin-Orbit Torque assisted (SOT-STT-MRAM) offer nonvolatility and low leakage, making them attractive for IoT systems. However, conventional MRAM read circuits face two fundamental challenges: high dynamic energy consu...