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Open access Sep 2026

Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory

Ferroelectric flux-closures are promising candidates for high-performance memories, offering reversible switching and low power consumption. However, integration of ferroelectric flux-closures into memory devices is elusive, mostly due to the constraint from the substrate on which polar film is grown. Here, we demonstr...

F. Gong, Song-Ge Zhang, Na Li et al. · 0 citations
Oct 2026

Modulating and stabilizing MoS2 electronics via a sulfur capping layer

Two-dimensional semiconductors, featuring atomic-scale thickness, excellent electrostatic gate control, and outstanding electrical properties, hold great promise for next-generation electronics. Recently, monolayer MoS2, a typical two-dimensional semiconductor, has been extensively explored for field-effect transistors...

Hao-Yang Cheng, Tong Li, Yu-Chao Zhou et al. · 0 citations

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