Ferroelectric flux-closures are promising candidates for high-performance memories, offering reversible switching and low power consumption. However, integration of ferroelectric flux-closures into memory devices is elusive, mostly due to the constraint from the substrate on which polar film is grown. Here, we demonstr...
F. Gong, Song-Ge Zhang, Na Li et al.· Nature Communications· 0 citations
Two-dimensional semiconductors, featuring atomic-scale thickness, excellent electrostatic gate control, and outstanding electrical properties, hold great promise for next-generation electronics. Recently, monolayer MoS2, a typical two-dimensional semiconductor, has been extensively explored for field-effect transistors...