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Open access Oct 2026

Ultrathin BiO x Charge-Transfer Doping for Cross-TMD Electronic Modulation and Homogeneous WSe2 Inverters

Charge-transfer doping provides a nondestructive route to tune two-dimensional transition-metal dichalcogenides (TMDs), but selectively patterned n-type dopants effective across different TMD channels remain limited. Here, ultrathin bismuth oxide (BiO x ) is used as an n-type charge-transfer doping and passivation laye...

Ching-Hao Hsu, Yu-Wei Hsu, Ta-Wei Hsu et al. · 0 citations
Open access Sep 2026

Controlling Electrochemical Metallization in Low-Temperature Microwave-Grown MoS2 RRAM through Ultrathin MoO3 Interfacial Engineering

Resistive random-access memory (RRAM) has attracted significant attention as a next-generation nonvolatile memory technology owing to its simple structure, fast switching speed, and compatibility with back-end-of-line (BEOL) integration. Among emerging switching media, two-dimensional molybdenum disulfide (MoS2) offe...

Jin-Bin Yang, Yu-Ting Huang, Zih-Syuan Huang et al. · 0 citations

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