Author

J. Trieschmann

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Preprint Sep 2026

On the physical origins of switching diversity in Cu-embedded SiO$_x$ memristive devices

Resistive switching devices with sub-stoichiometric SiO$_x$ and pancake-like Cu nanoparticles (Cu-PCs) exhibit distinct macroscopic current-voltage characteristics classified as capacitive or gradual (interface-type switching) and abrupt or resistive (filamentary-type switching), motivating an analysis of the microscop...

Sahitya Yarragolla, Rouven Lamprecht, Tobias Gergs et al. · 1 citation

#machine learning Preprint Sep 2026

From Processing to Functionality: Engineering Accessible Material States in Cu-Embedded SiO$_x$ Memristive Devices

Resistive switching in oxide-based devices is widely governed by stochastic defect processes, yet a predictive link between fabrication conditions and functional behavior remains elusive. Here, we establish a multiscale framework connecting plasma-defined deposition conditions to macroscopic device functionality in spu...

Tobias Gergs, Rouven Lamprecht, Sahitya Yarragolla et al. · 0 citations