Conference
Aug 2026
Predicting Structure-Dependent Dielectric Responses in High-k Oxides using Physics-Informed Graph Neural Networks
As semiconductor scaling extends into the deep nanometer regime, traditional silicon dioxide gate dielectrics encounter fundamental physical limitations imposed by due to severe quantum tunneling leakage currents. High-k gate dielectric materials have therefore become essential for modern nanoelectronics, enabling cont...
Liang Cao, Lin-Kang Lu, Jia-Yi Tang et al.
· International Conference on... · 0 citations