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Author

Jonghoon Shin

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Open access Sep 2026

Fast Electronic Memristors with Improved Retention and Synaptic Functionality Enabled by Tri-TaOx Engineering.

Artificial synaptic memristors require fast switching, stable retention, low variability, and linear conductance modulation, but achieving these properties simultaneously is difficult in electronic bipolar resistive switching (e-BRS) devices. In this study, a tri-TaOx memristor is demonstrated by interposing a defectiv...

Hyungjun Park, Hanyong Jeong, Kyung Seok Woo et al. · 0 citations

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