Author

L. R. Schreiber

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Preprint Sep 2026

Realization of ZnSe-based Field-Effect Transistors operating at Cryogenic Temperatures as a Platform for Future Spin-Qubit Applications

The wide-bandgap compound semiconductor ZnSe is a promising host material for the realization of electron spin-qubits. Its non-degenerate conduction band and the potential for isotopic nuclear spin purification promise long spin coherence times. Key requirements for such devices include reliable electrostatic control o...

Christine Falter, Y. Kutovyi, N. von den Driesch et al. · 0 citations

Preprint Aug 2026

Valley-Enabled Intrinsic Dresselhaus Spin-Orbit Coupling in Silicon

We develop a symmetry-based theory of spin-orbit-valley coupling in silicon that reveals an intrinsic source of Dresselhaus spin-orbit coupling independent of interfaces or external electric fields. Treating the valley degree of freedom as a symmetry-carrying quantum degree of freedom, we show that the Dresselhaus inte...

Johannes L. P. Steinschuld, H. Bluhm, L. R. Schreiber et al. · 0 citations

Preprint Aug 2026

Enhanced intrinsic spin-orbit driving of a Loss-DiVincenzo qubit near the spin-valley hotspot in Si/SiGe

In most Si/SiGe-based spin qubit implementations, high-fidelity single-qubit gates are achieved using micromagnets, which enable the use of electric spin dipole resonance via synthetic spin-orbit coupling (s-SOC). In contrast, intrinsic spin-orbit coupling (i-SOC) in silicon is generally considered to be weak. However,...

Alexander Willmes, Max Oberlander, Max Beer et al. · 0 citations