Author

Mallikarjun C. Sarsamba

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Volume 5 Issue

M. Govinda, Mallikarjun C. Sarsamba, S. Mathad · 164 citations · ⚡3

Open access Oct 2026

Single-Ended 7T SRAM Cell Design Using 18 nm FinFET Technology for Low-Power and High-Stability Nanoscale VLSI Applications

This study presents the design and performance evaluation of a single-ended seven-transistor (7T) static random-access memory (SRAM) cell in 18 nm fin field-effect transistor (FinFET) technology for low-power, high-stability nanoscale very-large-scale integration (VLSI) applications. The cell combines separate read and...

Govinda M. R., Mallikarjun C. Sarsamba, S. Mathad · Journal of Computers, Mechan... · 0 citations