As semiconductor scaling extends into the deep nanometer regime, traditional silicon dioxide gate dielectrics encounter fundamental physical limitations imposed by due to severe quantum tunneling leakage currents. High-k gate dielectric materials have therefore become essential for modern nanoelectronics, enabling cont...
Liang Cao, Lin-Kang Lu, Jia-Yi Tang et al.· International Conference on...· 0 citations
As integrated circuits advance toward heterogeneous integration, higher operating frequency, and greater power density, polymer dielectrics used in advanced packaging must simultaneously provide efficient heat dissipation and low relative dielectric constant. However, the joint optimization of thermal conductivity and...
Liang Cao, Rui-Yang Wu, Meng-Han Li et al.· International Conference on...· 0 citations
With the continuous development of the semiconductor industry in terms of miniaturization and performance improvement, the demand for high-frequency and energy-efficient semiconductor devices, traditional dielectric materials, represented by dense amorphous silicon dioxide (SiO2) grown via thermal oxidation or CVD, whi...
Liang Cao, Meng-Han Li, Dan Xu et al.· International Conference on...· 0 citations
Predicting the structure-dependent dielectric responses of high-k oxides remains a fundamental bottleneck in the development of next-generation nanoelectronics, primarily due to the complex nature of ionic polarization. In this work, we propose a physics-informed hybrid framework designed for the performance prediction...
