Author

Munhyeon Kim

2 papers indexed here

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Open access Sep 2026

Design-Space Exploration of Sensing Margin in 1T-nC Ferroelectric Random-Access Memory Considering Capacitor Length and Electrode Work Function Variations

The rapid advancement of artificial intelligence (AI) necessitates high-performance computing architecture. While compute express link (CXL) technologies facilitate memory expansion, conventional dynamic random-access memory (DRAM) encounters fundamental limitations in power consumption and scalability. Consequently, 1...

Jehyeok Jung, Munhyeon Kim, Sihyun Kim · Micromachines · 0 citations

Open access Aug 2026

Joint Multiplier–Adder Approximation with Flag-Based Error Recovery for BF16 Digital Compute-in-Memory

The Proposed scheme achieved the lowest BF16-referenced Layer NRMSE and Logit NRMSE among the evaluated Baseline, DIMC-S-derived, LSAC OR+SXAFA-derived, and Proposed schemes, while the Top-1 accuracy difference relative to the Baseline remained within −0.02%p to +0.12%p.

Yuhyeon Jin, Munhyeon Kim · Electronics · 0 citations