Ferroelectric flux-closures are promising candidates for high-performance memories, offering reversible switching and low power consumption. However, integration of ferroelectric flux-closures into memory devices is elusive, mostly due to the constraint from the substrate on which polar film is grown. Here, we demonstr...
F. Gong, Song-Ge Zhang, Na Li et al.· Nature Communications· 0 citations
Two-dimensional semiconductors, featuring atomic-scale thickness, excellent electrostatic gate control, and outstanding electrical properties, hold great promise for next-generation electronics. Recently, monolayer MoS2, a typical two-dimensional semiconductor, has been extensively explored for field-effect transistors...
Oxygen vacancies are central to the functionality of oxides, yet they typically exist as randomly distributed point defects, limiting the ability to precisely manipulate their collective behavior. Here, we report the room-temperature formation of a long-range-ordered oxygen-vacancy superstructure in single-crystalline...
Song Zhou, Songge Zhang, Lan-Ting Shi et al.· 0 citations
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