Interface-Engineered Quaternary Halide Memristor for Synergistic Heterostructure-Driven Neuromorphic Functionality and Robust Artificial Learning.
Solution-processed memristors offer a scalable, cost-effective pathway for next-generation computing. The Rb4Ag2BiBr9 (RABB) based resistive random-access memory exhibits stable non-volatile memristive behavior with low operating voltage (∼1.7 V), robust endurance over ∼900 cycles, and extended data retention up to ∼ 5...