Multiscale simulations of carrier transport in multi-quantum well (Al,Ga)N-based deep-UV LEDs: Alloy disorder, acceptor activation, and injection efficiency
Abstract Aluminium gallium nitride ((Al,Ga)N) has become a key material system for deep-UV light emitters, particularly in the UV-C range (<280 nm). However, device efficiencies remain far below their visible-range counterparts, motivating the need for detailed theoretical insight. Accurate modelling of (Al,Ga)N LEDs r...