Author

Peng-Peng Ren

3 papers indexed here

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Open access Oct 2026

Thickness scaling in hafnium ferroelectrics: insights into oxygen vacancy clustering and its impact on ferroelectricity and reliability

Hafnium-based ferroelectrics have emerged as promising candidates for next-generation non-volatile memory technologies owing to their excellent complementary metal–oxide–semiconductor (CMOS) compatibility and exceptional thickness scalability. However, the defect mechanisms governing the evolution of ferroelectricity a...

Xue-Pei Wang, Jin-Hao Liu, Hao-Bo Lin et al. · Moore and More · 0 citations

Aug 2026

Narrowing coercive field distribution in HfO2 ferroelectric memory via oxygen vacancy modulation for low-voltage operation

Low-voltage hafnia-based ferroelectric memory is essential but remains challenging because conventional strategies, such as thickness scaling or mean coercive field reduction, often incur leakage or remanent polarization (Pr) penalties. A key but often overlooked factor is that EC is not a single value but exhibits a b...

Jin-Hao Liu, Xue-Pei Wang, Hui-Hui Li et al. · Applied Physics Letters · 0 citations

#graph neural networks Open access Nov 2026

ATAN: A hybrid graph neural network framework for accelerating aging-aware timing analysis

CMOS device aging critically challenges digital circuit design, where conventional timing analysis struggles with the large number of input conditions, standard cells, and process corners. This work proposes ATAN, a novel framework for accelerating aging-aware timing analysis, employing a hybrid graph neural network. S...

Ye-Wei Zhang, Jin-Feng Ye, Hui-Zhen Qiu et al. · Microelectronics and reliabi... · 0 citations