Qi-Yu Huang

Narrowing coercive field distribution in HfO2 ferroelectric memory via oxygen vacancy modulation for low-voltage operation

Low-voltage hafnia-based ferroelectric memory is essential but remains challenging because conventional strategies, such as thickness scaling or mean coercive field reduction, often incur leakage or remanent polarization (Pr) penalties. A key but often overlooked factor is that EC is not a single value but exhibits a b...