Modeling of Diamond Trench Metal Oxide Semiconductor Barrier Schottky Rectifier Based on Dynamic Reverse Bias Simulation Framework
This work presents an electrothermal optimization study of diamond‐based trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) rectifiers using mixed‐mode drift‐diffusion technology computer aided design simulations under quasi‐static and dynamic reverse‐bias conditions. The influence of drift‐layer thickness, doping concentration, oxide thickness, and trench depth is systematically investigated through electric field and charge‐sharing analysis. Under quasi‐static operation, the breakdown voltage is limited either by the electric field beneath the Schottky contact or at the trench bottom, and optimal BV is achieved when these two peak fields are balanced. Dynamic simulations including incomplete dopant ionization reveal strong modifications of the transient electric field distribution under ultra‐fast voltage ramps. Avalanche initiation is delayed, leading to significant BV enhancement compared to quasi‐static conditions, especially for shallow trench and non‐punch‐through structures. In contrast, self‐heating effects remain negligible due to the high thermal conductivity of diamond. The results demonstrate that optimal TMBS design depends strongly on the operating regime, highlighting the importance of dynamic electrothermal modeling for high‐voltage and high‐frequency diamond power devices.