Defect-Engineered WSe2 Surface to Improve the Growth of Semimetal-Like Sn Contact
Transition metal dichalcogenides (TMDs) are promising for further device scaling. However, their practical application is hindered by high contact resistance at the metal–TMD interface. This issue originates from the van der Waals (vdW) gap, which introduces a tunneling barrier, and from metal-induced gap states (MIG...