Author

S. Gautam

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Open access Oct 2026

Reliable Bi-Layer HfO2/Zr-Doped ZnO Memristive Synaptic Devices

Oxide-based memristive synaptic devices are promising hardware elements for neuromorphic computing, but stochastic resistive switching caused by uncontrolled defect distributions and localized conductive paths remains a critical challenge. Here, we demonstrate Zr-doped ZnO memristive synaptic devices fabricated using a...

Dong-Min Kim, Yu Bin Kim, Sung Ho Kim et al. · IEEE Electron Device Letters · 0 citations

Oct 2026

Enhanced Reliability and Neuromorphic Functionality of a-IGZO-Based Memristors via N2 Annealing-Induced Vacancy Modulation.

Amorphous indium-gallium-zinc oxide (a-IGZO)-based memristors have attracted considerable attention for neuromorphic computing applications owing to their structural uniformity, amorphous-phase stability, CMOS compatibility, and oxygen-vacancy-mediated resistive switching characteristics. However, uncontrolled oxygen-v...

Yu-Bin Kim, Sung-Ho Kim, Dong-Min Kim et al. · ACS Applied Materials and In... · 0 citations