Oct 2026
Spatial Oxygen-Vacancy Engineering for Enhanced Ferroelectricity in Flexible Hf0.5Zr0.5O2 Devices.
HfO2-based ferroelectrics are promising for scalable memories, neuromorphic systems, and flexible electronics, but their performance is governed by oxygen vacancies that affect phase stability, leakage, wake-up behavior, and domain switching. Existing strategies mainly focus on tuning the overall oxygen-vacancy concent...
Qi-Miao Zeng, Jin-Dong Liu, Yu-Cheng Ou et al.
· ACS Applied Materials and In... · 0 citations