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Sung-Ho Kim

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Oct 2026

Enhanced Reliability and Neuromorphic Functionality of a-IGZO-Based Memristors via N2 Annealing-Induced Vacancy Modulation.

Amorphous indium-gallium-zinc oxide (a-IGZO)-based memristors have attracted considerable attention for neuromorphic computing applications owing to their structural uniformity, amorphous-phase stability, CMOS compatibility, and oxygen-vacancy-mediated resistive switching characteristics. However, uncontrolled oxygen-v...

Yu-Bin Kim, Sung-Ho Kim, Dong-Min Kim et al. · 0 citations

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