T. Wernicke

Interfacial Engineering of SiC/Si Heterostructures via Surface-Activated Direct Bonding: Crystallographic Orientation Effects and Stress Mitigation Strategies

This work presents a comparative study of heterojunctions based on 6-inch wafers between silicon carbide and silicon (including Si-face of 4H-SiC and Si, and C-face of 4H-SiC and Si) fabricated via low temperature surface-activated bonding performed on the EVG ComBond system. We systematically investigate crystallogr...