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Review Open access 2026

Two-dimensional gate dielectrics for field-effect transistors: from h-BN to emerging vdW and quasi-vdW materials

Recent progress in two-dimensional (2D) materials has generated immense interest in their use in field-effect transistors (FETs) for beyond-silicon electronics. Among them, 2D van der Waals (vdW) dielectrics play a pivotal role in facilitating high-performance, low-power devices, as they offer atomically smooth surface...

K. Sarkar, A. Söll, Eshan Elahi et al. · 0 citations

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