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Sep 2026

Wafer-scale 2H-MoTe2/perovskite quantum dot phototransistors with light-modulated ambipolar transport

Here, we report wafer-scale 2H-MoTe2/perovskite quantum dot phototransistors that exhibit light-modulated ambipolar charge transport. CsPbBr3 quantum dots are monolithically integrated with 2H-MoTe2 films grown by cold-wall chemical vapor deposition, enabling uniform device fabrication over entire 2-in. wafer. Under 40...

Hsi-Han Chen, Yung-Chi Yao, Jun-Zhi Feng et al. · 0 citations
Open access Sep 2026

Intrinsic Fermi Level Pinning and Reversible Depinning at Ultralow-Defect Epitaxial MoSe2/Au(111) Interfaces

Fermi level pinning (FLP) fundamentally limits contact engineering in two-dimensional semiconductors, yet its intrinsic origin remains obscured by the presence of interfacial disorder and defect-induced gap states. Although theoretical models attribute FLP to metal-induced gap states (MIGSs) and interface dipoles, dire...

Guan-Hao Chen, Cheng-Rong Hsing, Li-Syuan Lu et al. · 0 citations
Open access Sep 2026

Functionalization-Free Atomic Layer Deposition of Sub-1 nm EOT HfO2 Directly on MoS2 for Gate-All-Around Field-Effect Transistors

Layered semiconductors offer a promising route beyond conventional silicon technology but face challenges in integrating high-k dielectrics due to their dangling-bond-free surfaces. Here, we report a direct atomic layer deposition approach, termed HALO (High-dose precursor immersion, Adsorption enhancement, and Low-t...

Po-Heng Pao, Yi-Hsien Lin, Jia-Hao Chih et al. · 0 citations

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