Multistate Ferroelectric Memory for in-Memory Differential Computing in C‑Axis‑Oriented HZO‑ZrO2 Films Enabled by Interfacial Engineering.
The von Neumann bottleneck limits energy-efficient computing. While ferroelectric hafnium zirconium oxide (HZO) memories are promising for in-memory computing, achieving high speed, endurance, and reliable multilevel control remains challenging. This work addresses these challenges through interfacial engineering with...