Xiao-Xi Li

Thickness scaling in hafnium ferroelectrics: insights into oxygen vacancy clustering and its impact on ferroelectricity and reliability

Hafnium-based ferroelectrics have emerged as promising candidates for next-generation non-volatile memory technologies owing to their excellent complementary metal–oxide–semiconductor (CMOS) compatibility and exceptional thickness scalability. However, the defect mechanisms governing the evolution of ferroelectricity a...