Open access
Oct 2026
Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers
The development of high-performance p-type monolayer transistors is critical for extending two-dimensional (2D) semiconductors beyond silicon in sub 1-nm technology nodes for complementary metal–oxide–semiconductor (CMOS) circuits. However, insufficient doping and metal-induced gap states (MIGS) during metal deposition...
Lei-Fang Sun, Ting-Ting Gao, Lin Xu et al.
· Nature Communications · 0 citations