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Open access Sep 2026

Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory

Ferroelectric flux-closures are promising candidates for high-performance memories, offering reversible switching and low power consumption. However, integration of ferroelectric flux-closures into memory devices is elusive, mostly due to the constraint from the substrate on which polar film is grown. Here, we demonstr...

F. Gong, Song-Ge Zhang, Na Li et al. · 0 citations
Preprint Sep 2026

Colossal reversible conductivity switching by room-temperature oxygen-vacancy ordering in Aurivillius oxide films

Oxygen vacancies are central to the functionality of oxides, yet they typically exist as randomly distributed point defects, limiting the ability to precisely manipulate their collective behavior. Here, we report the room-temperature formation of a long-range-ordered oxygen-vacancy superstructure in single-crystalline...

Song Zhou, Songge Zhang, Lan-Ting Shi et al. · 0 citations

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