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Yi-De Tsai

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Open access Oct 2026

High-Performance Enhancement-Mode Ultra-thin ALD-Grown InWSnO Transistors Enabled by W/Sn Co-Engineering and Back-Channel Passivation

We report atomic layer deposition-grown indium–tungsten–tin oxide (IWTO) thin-film transistors that effectively circumvent the conventional on-current–threshold voltage (ION–VTH) trade-off in atomically thin oxide semiconductors. A W/Sn co-engineered IWTO channel is developed by systematically varying the W concentra...

Tsung-Che Chiang, Yi-De Tsai, Shi Guo et al. · 0 citations

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