Advancing van der Waals (vdW) spintronics requires hardware for multistate storage and in‐memory processing. All‑vdW spin–orbit torque magnetic tunnel junctions (SOT‑MTJs) that simultaneously achieve field‑free operation and multilevel switching have remained elusive. Here, we report an ion‑modulated all‑vdW SOT‑MT...
Spin-orbit torque (SOT) enables efficient manipulation of magnetization. Owing to its advantages of high speed, superior endurance, and low power consumption, SOT is attractive for non-volatile memory and logic devices, and emerges as a core writing mechanism for next-generation magnetic random-access memory. In co...
Meng-Fan Zhao, Zhi-Cheng Wang, Kun Ye et al.· Chinese Physics B· 0 citations
Soft magnetic materials are vital for a wide range of technologies. However, the very diversity of these applications poses a fundamental challenge for their design and manufacturing. This is compounded by a typical trade-off: improvements in mechanical property often necessitate a sacrifice in magnetic property, t...
Hui Xue, Jian-Da Chen, Shuai Hu et al.· Nano Reseach· 0 citations
Contemporary memory technologies are increasingly constrained by the fundamental trilemma of storage capacity, access latency, and power consumption. Among the emerging technologies, spin-orbit torque magnetic random-access memory (SOT-MRAM) shows promise to circumvent these challenges, owing to its fast switching dyna...
Ding-Gui Zeng, Yang Gao, Jin-Yu Duan et al.· 0 citations
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