Open access
Oct 2026
Thickness scaling in hafnium ferroelectrics: insights into oxygen vacancy clustering and its impact on ferroelectricity and reliability
Hafnium-based ferroelectrics have emerged as promising candidates for next-generation non-volatile memory technologies owing to their excellent complementary metal–oxide–semiconductor (CMOS) compatibility and exceptional thickness scalability. However, the defect mechanisms governing the evolution of ferroelectricity a...
Xue-Pei Wang, Jin-Hao Liu, Hao-Bo Lin et al.
· Moore and More · 0 citations