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Author

Zi-Xiong Liu

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Sep 2026

Multistate Ferroelectric Memory for in-Memory Differential Computing in C‑Axis‑Oriented HZO‑ZrO2 Films Enabled by Interfacial Engineering.

The von Neumann bottleneck limits energy-efficient computing. While ferroelectric hafnium zirconium oxide (HZO) memories are promising for in-memory computing, achieving high speed, endurance, and reliable multilevel control remains challenging. This work addresses these challenges through interfacial engineering with...

Xianyu Hu, Xing-Long Wang, Kangping Songjian et al. · 0 citations

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