Hole spins in silicon quantum dots are a promising platform for quantum computing due to their strong intrinsic spin-orbit coupling (SOC), which enables fast, all-electrical control. However, this coupling also increases their susceptibility to charge noise, thereby limiting coherence times. Moreover, holes in silicon are also affected by hyperfine interactions with residual nuclear spins in the silicon substrate, introducing a non-negligible source of low-frequency noise. Here, we implement a phase-modulated concatenated continuous driving (CCD) technique for hole spin qubits to suppress low-frequency noise through microwave phase modulation. This approach stabilizes Rabi oscillations and extends the oscillation decay time compared to the conventional method. Furthermore, by defining a qubit in the CCD frame, we achieve coherent control while simultaneously protecting the qubit from noise, confirming coherence protection during gate operations. These results demonstrate a viable route toward noise-robust hole spin qubits.
Hole spin qubits based on semiconductor quantum dots are promising for building future large-scale quantum computers owing to their all-electrical manipulation. However, abundant physical mechanisms of valence band holes lead to anisotropic qubit properties. There is an opportunity to prolong the coherence time and ach...
Yu-Chen Zhou, Zhen-Zhen Kong, Rong-Long Ma et al.· Physical Review Applied· 0 citations
Germanium hole spin qubits are a leading platform for semiconductor quantum computation due to their strong spin-orbit coupling, all-electrical operability, and absence of valley degeneracy. A central obstacle is charge noise, which couples to the qubit through the same spin-orbit interaction that enables fast electric...
Robust two-qubit gates are essential for scalable silicon spin qubits, but their fidelities are limited by microwave-control imperfections and charge-noise-induced exchange fluctuations. We propose a practical scheme for robust controlled-Z (CZ) and controlled-NOT (CNOT) gates in a silicon double quantum dot. By appl...
Rui Yu, Hao-Xuan Chen, Chen-Yi He et al.· Chinese Physics B· 0 citations
High-fidelity readout of spin qubits in semiconductor quantum dots can be achieved by combining a radiofrequency charge sensor with spin-to-charge conversion and Pauli spin blockade. However, reaching high readout fidelities with hole spin qubits remains challenging due to site-dependent spin anisotropies and short...
E. G. Kelly, L. Massai, Bence Het'enyi et al.· Nature Electronics· 0 citations
Hole spin qubits in semiconductor quantum dots (QDs) enable high-fidelity all-electric control, but conventional electric dipole spin resonance (EDSR) can require substantial rf drive power at the low magnetic fields that are favorable for qubit coherence and readout. In planar Ge hole spin qubits, this can reach -27 d...
A. Orekhov, Wonjin Jang, Pan-Ye Zhang et al.· 0 citations
Spin qubits are an attractive platform for scalable quantum information processing, and recently, laterally gated quantum dots (QDs) in Ge heterostructures have emerged as a leading implementation of spin qubits. To date, RF single-hole transistors (SHT) and integrated superconducting resonators have been used for spin...
M. Tanvir, E. Sajadi, M. Veldhorst et al.· 0 citations
We use cookies to run the site and, with your consent, for analytics and to show ads.
See our Cookie Policy.