Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node.

Abstract

Robust entanglement at room temperature is a central challenge for solid-state quantum information processing and quantum-enhanced sensing. Here we demonstrate room-temperature storage of entanglement in a silicon carbide (SiC) quantum node by coherently transferring an electron-nuclear entangled state onto long-lived nuclear-spin memory qubits. Using a shallow single color center in 4H-SiC, conventionally denoted PL6, we realize a fully addressable three-qubit register composed of one electron-spin processor and two strongly coupled ^{29}Si nuclear-spin memory qubits. This platform enables the deterministic generation of high-fidelity entangled states, including a nuclear-spin Bell state with a fidelity of 94±2% and a three-qubit Greenberger-Horne-Zeilinger (GHZ)-type state with a fidelity of 89±4%. By implementing a swap-gate protocol in the strong hyperfine-coupling regime, the electron-nuclear entanglement is transferred to the nuclear-spin memory with a fidelity of 92.5±2.5%, extending the entanglement lifetime by a factor of 240. We further confirm the generality of this approach in an additional heterogeneous ^{29}Si-^{13}C nuclear-spin register and, through a statistical survey of 200 single PL6 centers, show that multi-nuclear-spin registers occur naturally with probabilities above 10%. These results position shallow SiC color centers as a powerful platform for entanglement-assisted quantum sensing and scalable room-temperature quantum technologies.