Automated High-Resolution SIMS Nanoanalytics for Advanced Semiconductor Failure Analysis

Abstract

As semiconductor devices continue to scale in complexity and dimensionality, conventional analytical techniques such as SEM-EDS increasingly fall short in providing the spatial resolution and chemical sensitivity required for advanced failure analysis. Deeply buried interfaces, three-dimensional architectures, and ultra-low-level contamination often remain inaccessible with standard imaging and spectroscopy methods. In this work, we present an automated magnetic sector Secondary Ion Mass Spectrometry (SIMS) nanoanalytical platform based on the IONMASTER system, enabling hyperspectral chemical imaging with sub-20 nm lateral resolution and high ion transmission efficiency. The system integrates a vertical focused ion beam (FIB) column utilizing a Liquid Metal Alloy Ion Source (LMAIS), combined with a magnetic sector SIMS analyzer and a laser interferometer-controlled stage. Automated region-of-interest (ROI) targeting via direct GDSII and KLARF data import allows accurate localization of buried or electrically identified defects. Application examples demonstrate isotopic mapping, detection of subsurface contamination, and 3D reconstruction of buried features, highlighting the role of SIMS in closing critical analytical gaps in semiconductor failure analysis.