Lithography-Compatible Conductive Metal-Organic Frameworks for Scalable Electronics.

Abstract

Conductive metal-organic frameworks (MOFs) have emerged as promising electronic materials, yet their integration as functional components in semiconductor devices remains limited by challenges in device-level fabrication. Here, we demonstrate chemical vapor deposition (CVD)-grown Cu3(C6O6)2 thin films, a highly conductive two-dimensional (2D) MOF, as gate electrodes, enabled by their suitable work function and stable electronic structure. A sequential APS-Cr etching strategy enables high-conformity patterning of MOF thin films fully compatible with standard photolithographic processes, while preserving the integrity of the underlying device layers. Field-effect transistors were realized across three technologically relevant semiconductor platforms, including n-type MoS2, p-type MoTe2, and indium gallium zinc oxide (IGZO), demonstrating the generality of Cu3(C6O6)2 MOF as a gate electrode material. The resulting devices exhibit transfer characteristics and charge mobilities comparable to conventional metal gates in MoS2, while large-area IGZO transistor arrays show uniform and highly reproducible electrical performance. These results establish conductive MOF thin films as viable gate materials and expand their potential toward source-drain electrodes and even channel materials, in next-generation semiconductor devices.