Jul 2026· Advanced Composites and Hybrid Materials· 0 citations
Abstract
The precise engineering of nanoscale gaps between discrete building blocks offers a direct pathway to govern charge transport physics in functional materials. Here, we demonstrate a fundamental transition from stochastic bulk conduction to reliable interface-mediated volatile switching by deliberately introducing structural discontinuity in spinel-type Co
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nanocube (NC) arrays. While continuous oxide thin films suffer from irreversible breakdown and featureless transport, and disordered NC assemblies exhibit only leakage-like conduction, our self-assembled NC architecture enables a stable and low-power functional response. Utilizing an automated metrology framework based on the Segment Anything Model (SAM), we confirm the formation of a highly ordered, non-percolated square lattice with a narrowly distributed interparticle gap of 2.84 ± 0.64 nm across thousands of junctions. This statistically defined NC-gap-NC junction network confines the active conduction volume to nanoscale junctions, achieving an ultralow operating current of ~ 10 nA and exceptional statistical uniformity (coefficient of variation < 9%); the operating voltage is likewise set by the interparticle junction and can be brought to the ~ 1 V regime by contracting the gap through ligand exchange. Quantitative analysis identifies junction-limited, multi-regime transport across the NC-gap-NC interfaces as the dominant conduction picture, with Schottky-emission-like injection at intermediate fields and Fowler–Nordheim-type field-assisted tunneling at high fields. Furthermore, time-resolved measurements reveal dual-mode relaxation dynamics characterized by microsecond electronic detrapping and slow recovery consistent with ionic back-diffusion, which facilitate complex temporal dynamics for biomimetic signal processing. Our findings suggest that a preformed, statistically quantified nanogap network, rather than bulk percolation, can serve as a useful design principle for energy-efficient electronic primitives beyond conventional continuous media.
Resistive switching devices with sub-stoichiometric SiO$_x$ and pancake-like Cu nanoparticles (Cu-PCs) exhibit distinct macroscopic current-voltage characteristics classified as capacitive or gradual (interface-type switching) and abrupt or resistive (filamentary-type switching), motivating an analysis of the microscop...
Sahitya Yarragolla, Rouven Lamprecht, Tobias Gergs et al.· 1 citation
Monolayer lateral heterostructures (LHSs) composed of two-dimensional semiconducting ferroelectrics hold promise for non-volatile electronic and optoelectronic applications. Lattice misfit strain at these atomically sharp interfaces can significantly modulate in-plane polarization and related electronic properties,...
Zi'ang Gao, Jing-Rong Ji, Shiva P. Poudel et al.· Nano Reseach· 0 citations
We present a planar, dopant-segregation-free SnO2 nanofilm varistor on a polycrystalline Al2O3 substrate that achieves a kilovolt-level breakdown voltage (V1 mA ≈ 759 V at 300 K). By directing the conduction pathway laterally across approximately 200 grain boundaries in series, this architecture overcomes the low-volta...
Yong Zhang, Haiguo Wang, Chun-Rui Ma et al.· Applied Physics Letters· 0 citations
Halide perovskites have emerged as promising materials for memristive devices. While their pronounced electrochemical reactivity and fast ionic mobility enable numerous advantages including low-voltage operation and fast switching, the same features also render perovskite-based memristors vulnerable to metallic shunts...
Tuo Hu, Nathalie Tuazon, Zhaojian Xu et al.· ACS Nano· 0 citations
Resistive switching in oxide-based devices is widely governed by stochastic defect processes, yet a predictive link between fabrication conditions and functional behavior remains elusive. Here, we establish a multiscale framework connecting plasma-defined deposition conditions to macroscopic device functionality in spu...
Tobias Gergs, Rouven Lamprecht, Sahitya Yarragolla et al.· 0 citations
The realization of sophisticated autonomous interaction in humanoid robots is currently constrained by the complexity and stochasticity of conventional sensory hardware. Volatile memristors provide a promising biomimetic alternative; however, their performance is often limited by uncontrolled ionic dynamics in disorder...
Jing-Zhou Shi, Ze-Ning Gao, Xin-Ming Ma et al.· Angewandte Chemie· 0 citations
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