Skip to content
Open access

Engineering structural discontinuity in ordered Co3O4 nanocube arrays for volatile memristive dynamics

Jul 2026 · Advanced Composites and Hybrid Materials · 0 citations

Abstract

The precise engineering of nanoscale gaps between discrete building blocks offers a direct pathway to govern charge transport physics in functional materials. Here, we demonstrate a fundamental transition from stochastic bulk conduction to reliable interface-mediated volatile switching by deliberately introducing structural discontinuity in spinel-type Co 3 O 4 nanocube (NC) arrays. While continuous oxide thin films suffer from irreversible breakdown and featureless transport, and disordered NC assemblies exhibit only leakage-like conduction, our self-assembled NC architecture enables a stable and low-power functional response. Utilizing an automated metrology framework based on the Segment Anything Model (SAM), we confirm the formation of a highly ordered, non-percolated square lattice with a narrowly distributed interparticle gap of 2.84 ± 0.64 nm across thousands of junctions. This statistically defined NC-gap-NC junction network confines the active conduction volume to nanoscale junctions, achieving an ultralow operating current of ~ 10 nA and exceptional statistical uniformity (coefficient of variation < 9%); the operating voltage is likewise set by the interparticle junction and can be brought to the ~ 1 V regime by contracting the gap through ligand exchange. Quantitative analysis identifies junction-limited, multi-regime transport across the NC-gap-NC interfaces as the dominant conduction picture, with Schottky-emission-like injection at intermediate fields and Fowler–Nordheim-type field-assisted tunneling at high fields. Furthermore, time-resolved measurements reveal dual-mode relaxation dynamics characterized by microsecond electronic detrapping and slow recovery consistent with ionic back-diffusion, which facilitate complex temporal dynamics for biomimetic signal processing. Our findings suggest that a preformed, statistically quantified nanogap network, rather than bulk percolation, can serve as a useful design principle for energy-efficient electronic primitives beyond conventional continuous media.

Read PDF

Similar papers

Preprint Sep 2026

On the physical origins of switching diversity in Cu-embedded SiO$_x$ memristive devices

Resistive switching devices with sub-stoichiometric SiO$_x$ and pancake-like Cu nanoparticles (Cu-PCs) exhibit distinct macroscopic current-voltage characteristics classified as capacitive or gradual (interface-type switching) and abrupt or resistive (filamentary-type switching), motivating an analysis of the microscop...

Sahitya Yarragolla, Rouven Lamprecht, Tobias Gergs et al. · 1 citation
Open access Aug 2026

Asymmetric strain distribution in ferroelectric/paraelectric SnTe-PbTe monolayer lateral heterostructures

Monolayer lateral heterostructures (LHSs) composed of two-dimensional semiconducting ferroelectrics hold promise for non-volatile electronic and optoelectronic applications. Lattice misfit strain at these atomically sharp interfaces can significantly modulate in-plane polarization and related electronic properties,...

Zi'ang Gao, Jing-Rong Ji, Shiva P. Poudel et al. · 0 citations
Aug 2026

Thermally tunable high-voltage breakdown and divergent avalanche nonlinearity in planar SnO2 nanofilm varistors

We present a planar, dopant-segregation-free SnO2 nanofilm varistor on a polycrystalline Al2O3 substrate that achieves a kilovolt-level breakdown voltage (V1 mA ≈ 759 V at 300 K). By directing the conduction pathway laterally across approximately 200 grain boundaries in series, this architecture overcomes the low-volta...

Yong Zhang, Haiguo Wang, Chun-Rui Ma et al. · 0 citations
Open access Aug 2026

From Filamentary Failure to Durable Halide Perovskite Memristors

Halide perovskites have emerged as promising materials for memristive devices. While their pronounced electrochemical reactivity and fast ionic mobility enable numerous advantages including low-voltage operation and fast switching, the same features also render perovskite-based memristors vulnerable to metallic shunts...

Tuo Hu, Nathalie Tuazon, Zhaojian Xu et al. · 0 citations
#machine learning Preprint Sep 2026

From Processing to Functionality: Engineering Accessible Material States in Cu-Embedded SiO$_x$ Memristive Devices

Resistive switching in oxide-based devices is widely governed by stochastic defect processes, yet a predictive link between fabrication conditions and functional behavior remains elusive. Here, we establish a multiscale framework connecting plasma-defined deposition conditions to macroscopic device functionality in spu...

Tobias Gergs, Rouven Lamprecht, Sahitya Yarragolla et al. · 0 citations
Sep 2026

Two-Dimensional SnS2 Interlayers Enable Vacancy-Guided Ion Migration for Stable Diffusive Memristors and Bioinspired Nociception.

The realization of sophisticated autonomous interaction in humanoid robots is currently constrained by the complexity and stochasticity of conventional sensory hardware. Volatile memristors provide a promising biomimetic alternative; however, their performance is often limited by uncontrolled ionic dynamics in disorder...

Jing-Zhou Shi, Ze-Ning Gao, Xin-Ming Ma et al. · 0 citations

We use cookies to run the site and, with your consent, for analytics and to show ads. See our Cookie Policy.